Charge trapping in the insulating oxide of MOS transistors has been linked to a number of detrimental issues, like random telegraph and1/f noise, bias temperature instabilities, irradiation damage and hot carrier degradation. With the rapid scaling of modern devices these phenomena are becoming more and more important. Although nanoscaledevices only contain a small number of defects, each of them can have an increasingly catastrophic impact on the overall device behavior. In particular, dynamic changes in the occupancy of these defects leads to time-dependent variability, which becomes more and more important as device sizes are further reduced.  With the recently developed time-dependent defect spectroscopy (TDDS), the capture and emission of single carriers can be studied.  The latest TDDS results will be reviewed together with their implications on modeling and reliability predictions. In particular, a thorough theoretical framework for charge trapping will be discussed, starting from the ab-initio level and reaching up to the device level.

 

Short bio:

Prof. Tibor Grasser received the Diplomingenieur degree in communications engineering, the Ph.D. degree in technical sciences, and the venia docendi in microelectronics from the Technische Universität Wien in 1995, 1999, and 2002, respectively. He is currently the Head of the Institute for Microelectronics at TU Wien.

Since 1997 he has headed the Minimos-NT development group, working on the successor of the highly successful MiniMOS program. From 2003 till 2010 he was the director of the Christian Doppler Laboratory for TCAD in Microelectronics. Prof. Grasser is the co-author or author of over 450 articles in scientific books, journals, and conferences proceedings, and has presented invited talks, tutorials and short courses at various conferences such as the IEDM, IRPS, VLSI Symp., SISPAD, ESSDERC, IIRW, ESREF, INFOS, ISDRS, and the ECS meetings. He is an IEEE Fellow, the editor of a book on advanced device simulation, organic electronics, the bias temperature instability, and hot carrier degradation, a distinguished lecturer of the IEEE Electron Devices Society, has been involved in the program and management committees of conferences such as IEDM, IRPS, SISPAD, IWCE, ESSDERC, IIRW, and ISDRS, and is a recipient of the Best Paper Awards at IRPS (2008, 2010, and 2012), ESREF 2008, and IPFA (2013 and 2014) as well as the IEEE EDS Paul Rappaport Award 2011. He was also a Chairman of SISPAD 2007 and General Chair of IIRW 2014. His current scientific interests include semiconductor device reliability issues as well as device modeling and simulation in general.